DocumentCode :
1450480
Title :
Sensitive asymmetrical MI effect in crossed anisotropy sputtered films
Author :
Ueno, K. ; Hiramoto, H. ; Mohri, K. ; Uchiyama, T. ; Panina, L.V.
Author_Institution :
Stanley Electr. Co. R&D, Yokohama, Japan
Volume :
36
Issue :
5
fYear :
2000
fDate :
9/1/2000 12:00:00 AM
Firstpage :
3448
Lastpage :
3450
Abstract :
This paper reports experimental results to obtain a sensitive and asymmetrical MI effect in crossed anisotropy sputtered films magnetized with a DC-biased AC or pulse current. The sensitive and asymmetrical MI effect occurs, because the crossed anisotropy films induce spiral magnetic anisotropy. The crossed anisotropy film (Co72Fe8B20) was made on a glass substrate using DC sputtering with two layers having 4.5 μm thickness each applying a DC field of 21 kA/m along with a designed anisotropy direction. A linear MI characteristic with a field detection sensitivity of 0.15%/(A/m) (12%/Oe) was obtained, which realizes a sensitive linear field sensor without any DC bias field
Keywords :
amorphous magnetic materials; boron alloys; cobalt alloys; iron alloys; magnetic anisotropy; magnetic sensors; magnetic thin films; magnetisation; magnetoresistance; metallic glasses; sputtered coatings; Co72Fe8B20; amorphous magnetic material; crossed anisotropy sputtered films; field detection sensitivity; glass substrate; linear characteristic; magnetization; metallic glass; sensitive asymmetrical magnetoimpedance effect; sensitive linear field sensor; spiral magnetic anisotropy; Anisotropic magnetoresistance; Glass; Iron; Magnetic anisotropy; Magnetic films; Perpendicular magnetic anisotropy; Sensor phenomena and characterization; Spirals; Sputtering; Substrates;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/20.908857
Filename :
908857
Link To Document :
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