Title :
3-D System Integration of Processor and Multi-Stacked SRAMs Using Inductive-Coupling Link
Author :
Saen, Makoto ; Osada, Kenichi ; Okuma, Yasuyuki ; Niitsu, Kiichi ; Shimazaki, Yasuhisa ; Sugimori, Yasufumi ; Kohama, Yoshinori ; Kasuga, Kazutaka ; Nonomura, Itaru ; Irie, Naohiko ; Hattori, Toshihiro ; Hasegawa, Atsushi ; Kuroda, Tadahiro
Author_Institution :
Syst. LSI Res. Dept., Hitachi, Ltd., Kokubunji, Japan
fDate :
4/1/2010 12:00:00 AM
Abstract :
This paper describes a three-dimensional (3-D) system integration of a full-fledged processor chip and two memory chips using inductive coupling. To attain a 3-D communication link with a smaller area and lower power-consumption, shortening the link distance and preventing signal degradation due to unused inductors are important challenges. Therefore, we developed a new 3D-integrated wire-penetrated multi-layer structure for a shorter link distance and an open-skipped-inductor scheme for suppressing signal degradation. In addition, to avoid undefined-value propagation in stacking multi-memories using an inductive-coupling link, we proposed a memory-access-control scheme with a pinpoint-data-capture scheme. We demonstrate that three fabricated chips can be successfully AC-coupled using inductive coupling. The power and area efficiency of the link are 1 pj/b and 0.15 mm2 /Gbps, respectively, which are the same as those of two-chip integration.
Keywords :
SRAM chips; microprocessor chips; 3D communication link; 3D system integration; SRAM; inductive coupling; inductive-coupling link; memory chips; memory-access-control scheme; pinpoint-data-capture scheme; processor chip; Bandwidth; Chip scale packaging; Costs; Degradation; Helium; Inductors; Laboratories; Stacking; Through-silicon vias; Wires; Inductive coupling; three-dimensional system integration;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.2010.2040310