Title :
A novel high-gain image sensor cell based on Si p-n APD in charge storage mode operation
Author :
Komobuchi, Hiroyoshi ; Ando, Takao
Author_Institution :
Shizuoka Univ., Hamamatsu, Japan
fDate :
8/1/1990 12:00:00 AM
Abstract :
A high-gain image sensor cell based on Si-avalanche p-n photodiodes in the charge-storage mode from below to above the breakdown voltage region without avalanche discharge during the readout time period is described. Photoelectron conversion characteristics of a proposed dual-gate avalanche photodiode (APD) image sensor cell in below-breakdown voltage operation were analyzed on the assumption that multiplication gain during storage time, which depends on APD bias, followed an empirical formula involving multiplication gain and reverse bias in DC bias condition. The above-breakdown voltage operation is also considered. Experimental results agree with results from analytical models
Keywords :
avalanche photodiodes; elemental semiconductors; field effect integrated circuits; image sensors; silicon; APD bias; APD in charge storage mode operation; DC bias condition; Si; above-breakdown voltage operation; analytical models; below-breakdown voltage operation; breakdown voltage region; dual-gate avalanche photodiode; high-gain image sensor cell; multiplication gain; reverse bias; Avalanche photodiodes; Charge-coupled image sensors; Circuit testing; Image analysis; Image converters; Image sensors; Image storage; Pixel; TV; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
