DocumentCode :
1450621
Title :
Investigation of Gate Etch Damage at Metal/High- 
Gate Dielectric Stack Through Random Telegraph Noise in Gate Edge Direct Tunneling Current
Author :
Cho, Heung-Jae ; Son, Younghwan ; Oh, Byoungchan ; Jang, Seunghyun ; Lee, Jong-Ho ; Park, Byung-Gook ; Shin, Hyungcheol
Author_Institution :
Sch. of Electr. Eng. & Comput. Sci., Seoul Nat. Univ., Seoul, South Korea
Volume :
32
Issue :
4
fYear :
2011
fDate :
4/1/2011 12:00:00 AM
Firstpage :
569
Lastpage :
571
Abstract :
Plasma damage on a high-k/SiO2 dielectric at a gate edge during a dry etch process is investigated. The damage was observed to generate slow oxide traps, causing a random telegraph noise (RTN) in a gate edge direct tunneling current. Through the analysis of the RTN, the distribution of the oxide traps in the high-k/SiO2 dielectric was obtained, and the plasma-damage-induced oxide traps were found to be distributed over a wide area of the high-k/SiO2 sidewall at the gate edge region.
Keywords :
MOSFET; high-k dielectric thin films; semiconductor device noise; silicon compounds; sputter etching; SiO2; dry etch process; gate edge direct tunneling current; gate etch damage; metal-high-k gate dielectric stack; plasma damage; random telegraph noise; Dielectrics; Electron traps; High K dielectric materials; Leakage current; Logic gates; Metals; Noise; Gate edge direct tunneling (EDT) current; oxide trap; plasma damage; random telegraph noise (RTN);
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2011.2106108
Filename :
5713809
Link To Document :
