Beyond MRAM, CMOS/MTJ Integration for Logic Components

Author

Prenat, Guillaume ; Dieny, Bernard ; Guo, Wei ; El Baraji, Mourad ; Javerliac, Virgile ; Nozières, Jean-Pierre

Author_Institution

SPINTEC, CEA/CNRS, Grenoble, France

Volume

45

Issue

10

fYear

2009

Firstpage

3400

Lastpage

3405

Abstract

Spintronics is a new discipline in which the spin of the electron is used as an additional degree of freedom besides its electrical charge to build innovative electronic components. Magnetic materials can be used as spin polarizer/analyzer in association with semiconductors or insulators, resulting in hybrid CMOS/magnetic architectures. Magnetic Tunnel Junctions (MTJ) are the basic elements of a new kind of memory, called MRAM (Magnetic Random Access Memory). Besides MRAM, it has recently been shown that by combining MTJ and CMOS components, one can also develop new functionalities for logic devices. This paper aims at giving a general overview of these novel hybrid magnetic/CMOS architectures and the design tools required for their design.

Keywords

CMOS logic circuits; MRAM devices; application specific integrated circuits; field programmable gate arrays; magnetic logic; magnetic tunnelling; magnetoelectronics; CMOS-MTJ integration; MRAM; electrical charge; hybrid CMOS-magnetic architectures; logic components; magnetic random access memory; magnetic tunnel junctions; spintronics; BSIM; FPGA; SPICE; compact modeling; hybrid CMOS/magnetic; low-power design; magnetic random access memory (MRAM); magnetic tunnel junctions (MTJ);

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/TMAG.2009.2025257

Filename

5257242