DocumentCode :
1450922
Title :
Floating Gate PMOS Dosimeters Under Bias Controlled Cycled Measurement
Author :
Inza, M. García ; Lipovetzky, Jose ; Redin, Eduardo Gabriel ; Carbonetto, Sebastian ; Faigon, Adrian
Author_Institution :
Dept. de Fis., Univ. de Buenos Aires, Buenos Aires, Argentina
Volume :
58
Issue :
3
fYear :
2011
fDate :
6/1/2011 12:00:00 AM
Firstpage :
808
Lastpage :
812
Abstract :
Floating Gate Metal Oxide Semiconductor (FG-MOS) structures, designed and fabricated in a CMOS process, were irradiated under the Bias Controlled Cycled Measurement (BCCM) novel technique conditions. Results presented in this work show the possibility of using such structures with the BCCM technique to measure ionizing radiation absorbed dose over a range of several kGy without significant loss of sensitivity. Transients observed after the bias switch are related to the evolution of the charge distribution between the floating gate and oxide traps near the semiconductor.
Keywords :
CMOS integrated circuits; dosimeters; radiation effects; transistors; BCCM novel technique condition; CMOS process; bias controlled cycled measurement novel technique condition; floating gate PMOS dosimeter; floating gate metal oxide semiconductor structure; ionizing radiation absorbed dose measurement; oxide trap; Dosimetry; Logic gates; Radiation effects; Sensitivity; Switches; Temperature measurement; Transient analysis; Dosimetry; MOS devices; radiation effects; radiation monitoring;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.2010.2099668
Filename :
5713853
Link To Document :
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