Title :
Floating Gate PMOS Dosimeters Under Bias Controlled Cycled Measurement
Author :
Inza, M. García ; Lipovetzky, Jose ; Redin, Eduardo Gabriel ; Carbonetto, Sebastian ; Faigon, Adrian
Author_Institution :
Dept. de Fis., Univ. de Buenos Aires, Buenos Aires, Argentina
fDate :
6/1/2011 12:00:00 AM
Abstract :
Floating Gate Metal Oxide Semiconductor (FG-MOS) structures, designed and fabricated in a CMOS process, were irradiated under the Bias Controlled Cycled Measurement (BCCM) novel technique conditions. Results presented in this work show the possibility of using such structures with the BCCM technique to measure ionizing radiation absorbed dose over a range of several kGy without significant loss of sensitivity. Transients observed after the bias switch are related to the evolution of the charge distribution between the floating gate and oxide traps near the semiconductor.
Keywords :
CMOS integrated circuits; dosimeters; radiation effects; transistors; BCCM novel technique condition; CMOS process; bias controlled cycled measurement novel technique condition; floating gate PMOS dosimeter; floating gate metal oxide semiconductor structure; ionizing radiation absorbed dose measurement; oxide trap; Dosimetry; Logic gates; Radiation effects; Sensitivity; Switches; Temperature measurement; Transient analysis; Dosimetry; MOS devices; radiation effects; radiation monitoring;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2010.2099668