Title :
Impact of Process Variations on SRAM Single Event Upsets
Author :
Kauppila, A.V. ; Bhuva, Bharat L. ; Kauppila, J.S. ; Massengill, Lloyd W. ; Holman, W.T.
Author_Institution :
Electr. Eng. & Comput. Sci. Dept., Vanderbilt Univ., Nashville, TN, USA
fDate :
6/1/2011 12:00:00 AM
Abstract :
Process variations affect the single event (SE) hardness of SRAM cells. Monte-Carlo simulations show this effect and can be used to quantify the significance of process parameter shifts on SRAM SE upset probabilities.
Keywords :
Monte Carlo methods; SRAM chips; Monte-Carlo simulation; SRAM single event upset; process parameter shift; process variation; CMOS integrated circuits; MOSFETs; Random access memory; Single event upset; Threshold voltage; CMOS; SRAMs; critical charge; single event transients; single event upset;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2010.2098419
