Title :
AC analysis of amorphous silicon devices
Author :
Pellegrini, Alessandro ; Colalongo, Luigi ; Valdinoci, Marina ; Rudan, Massimo
Author_Institution :
Dipartimento di Elettronica, Inf. e Sistemistica, Bologna Univ., Italy
fDate :
11/1/1996 12:00:00 AM
Abstract :
The transport model in semiconductors is examined in the case where the effect of distributed gap states is significant like, e.g., in thin-film transistors. A solution scheme is derived for the two additional continuity equations accounting for the trapped charge such that, without loss of generality, the efficiency of the traditional method implemented in the existing device-analysis codes is kept. The dynamic effect of the trapped charge is then examined in the ac operation of a realistic thin-film device, including the analysis of the interelectrode capacitances
Keywords :
amorphous semiconductors; electron traps; elemental semiconductors; semiconductor device models; silicon; thin film transistors; AC analysis; Si; amorphous silicon device; distributed gap states; dynamic effect; interelectrode capacitance; semiconductor; thin-film transistor; transport model; trapped charge; Amorphous silicon; Capacitance; Charge carrier processes; Crystallization; Electron mobility; Electron traps; Equations; Substrates; Thin film devices; Thin film transistors;
Journal_Title :
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
