Title :
Two-section electroabsorption modulator with negative chirp at low insertion loss
Author :
Claassen, M. ; Harth, W. ; Stegmüller, B.
Author_Institution :
Lehrstuhl fur Allgemeine Elektrotech. & Angewandte Elektron., Tech. Univ. Munchen, Germany
fDate :
11/7/1996 12:00:00 AM
Abstract :
A two-section electroabsorption modulator is proposed with an effective chirp parameter of -0.5 and an insertion loss of only 12.5 dB for a voltage swing of 1.2 V. These values are deduced from measured attenuation and phase characteristics for an SL InGaAsP-structure containing 15 quantum wells
Keywords :
III-V semiconductors; chirp modulation; electro-optical modulation; electroabsorption; gallium arsenide; gallium compounds; indium compounds; integrated optics; optical communication equipment; optical losses; semiconductor quantum wells; 12.5 dB; InGaAsP; InGaAsP structure; attenuation characteristics; low insertion loss; negative chirp; phase characteristics; quantum wells; two-section electroabsorption modulator;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19961423
