• DocumentCode
    1451105
  • Title

    Two-section electroabsorption modulator with negative chirp at low insertion loss

  • Author

    Claassen, M. ; Harth, W. ; Stegmüller, B.

  • Author_Institution
    Lehrstuhl fur Allgemeine Elektrotech. & Angewandte Elektron., Tech. Univ. Munchen, Germany
  • Volume
    32
  • Issue
    23
  • fYear
    1996
  • fDate
    11/7/1996 12:00:00 AM
  • Firstpage
    2121
  • Lastpage
    2122
  • Abstract
    A two-section electroabsorption modulator is proposed with an effective chirp parameter of -0.5 and an insertion loss of only 12.5 dB for a voltage swing of 1.2 V. These values are deduced from measured attenuation and phase characteristics for an SL InGaAsP-structure containing 15 quantum wells
  • Keywords
    III-V semiconductors; chirp modulation; electro-optical modulation; electroabsorption; gallium arsenide; gallium compounds; indium compounds; integrated optics; optical communication equipment; optical losses; semiconductor quantum wells; 12.5 dB; InGaAsP; InGaAsP structure; attenuation characteristics; low insertion loss; negative chirp; phase characteristics; quantum wells; two-section electroabsorption modulator;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19961423
  • Filename
    543787
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1451105