Computer-aided design of monolithic MESFET distributed amplifiers

Author

Vai, Man-Kuan ; Prasad, Sheila

Author_Institution

Dept. of Electr. & Comput. Eng., Northeastern Univ., Boston, MA, USA

Volume

38

Issue

4

fYear

1990

fDate

4/1/1990 12:00:00 AM

Firstpage

345

Lastpage

349

Abstract

A computerized optimization method called simulated annealing is applied to the design of monolithic distributed amplifiers. The element values in the small-signal equivalent circuit model of the MESFETs, the characteristics of the gate and drain transmission lines, and the number of stages are generated to match a specified frequency response by this computer-aided design (CAD) process. The success of this process lies in the fact that it is fully automatic and the only input needed is the desired flat band gain and the 3 dB point. The method itself is sufficiently general that it can be applied to a variety of design problems. Excellent agreement is shown when the distributed amplifier designed is simulated using Touchstone, a popular microwave simulation program

Keywords

MMIC; Schottky gate field effect transistors; circuit CAD; equivalent circuits; field effect integrated circuits; microwave amplifiers; optimisation; 3 dB point; CAD; MMIC; computer-aided design; computerized optimization method; drain transmission lines; flat band gain; microwave IC; monolithic MESFET distributed amplifiers; simulated annealing; small-signal equivalent circuit model; specified frequency response; Circuit simulation; Computational modeling; Computer simulation; Design automation; Distributed amplifiers; Distributed computing; Equivalent circuits; MESFETs; Optimization methods; Simulated annealing;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.52573

Filename

52573