• DocumentCode
    1451223
  • Title

    Temperature-compensated linear BiCMOS transconductor

  • Author

    Chung, W.-S. ; Park, J.-M. ; Kim, K.

  • Author_Institution
    Dept. of Semicond. Eng., Chongju Univ., South Korea
  • Volume
    32
  • Issue
    22
  • fYear
    1996
  • fDate
    10/24/1996 12:00:00 AM
  • Firstpage
    2043
  • Lastpage
    2044
  • Abstract
    A BiCMOS circuit technique for realising temperature-compensated linear transconductors is described which uses two linear MOS transconductors and a bipolar translinear current gain cell. The theory of operation is presented and simulation results are used to verify theoretical predictions. The results show that the transconductance can be varied over three decades and its temperature coefficient is <200 ppm/°C
  • Keywords
    BiCMOS analogue integrated circuits; analogue processing circuits; compensation; integrated circuit design; bipolar translinear current gain cell; linear BiCMOS transconductor; linear MOS transconductors; temperature compensation;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19961371
  • Filename
    543803
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1451223