DocumentCode :
1451632
Title :
Successful Application of the 8-band {mbi{k}}{\\cdot} {mbi{p}} Theory to Optical Properties
Author :
Fujisawa, Takeshi ; Sato, Tomonari ; Mitsuhara, Manabu ; Kakitsuka, Takaaki ; Yamanaka, Takayuki ; Kondo, Yasuhiro ; Kano, Fumiyoshi
Author_Institution :
NTT Photonics Labs., Atsugi, Japan
Volume :
45
Issue :
9
fYear :
2009
Firstpage :
1183
Lastpage :
1191
Abstract :
Band-edge optical properties of highly strained In(Ga)As/InGaAs quantum wells on InP with the bandgap wavelength longer than 2 mum are analyzed by using 6- and 8-band kmiddotp theory. It is demonstrated that the 8-band model is indispensable for the analysis of highly strained In(Ga)As/InGaAs quantum wells due to the strong coupling between conduction and valence bands induced by large strain in the well. Furthermore, an energy correction originating from the interaction between the spin-orbit coupling and the strain, which has been discarded in conventional kmiddotp theory, is taken into account, and the role of the effect for highly strained quantum wells is discussed. The photoluminescence peak wavelength and absorption spectra of In(Ga)As/InGaAs quantum wells calculated by 8-band model are in excellent agreement with those obtained by experiment, showing the validity of the results presented here.
Keywords :
III-V semiconductors; conduction bands; gallium arsenide; indium compounds; k.p calculations; photoluminescence; semiconductor quantum wells; spin-orbit interactions; valence bands; 8-band kmiddotp theory; InAs-InGaAs; InGaAs; conduction-valence band coupling; optical properties; photoluminescence peak wavelength; quantum wells; spin-orbit coupling; Absorption; Capacitive sensors; Effective mass; High speed optical techniques; Indium gallium arsenide; Indium phosphide; Laser theory; Optical coupling; Photoluminescence; Quantum mechanics; ${mbi{k}} {cdot} {mbi{p}}$ theory; Band structure; microscopic theory; quantum well lasser; strained quantum well;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.2009.2021776
Filename :
5257377
Link To Document :
بازگشت