Reliability Characterization and Modeling Solution to Predict Aging of 40-nm MOSFET DC and RF Performances Induced by RF Stresses

Author

Negre, Laurent ; Roy, David ; Cacho, Florian ; Scheer, Patrick ; Jan, Sebastien ; Boret, Samuel ; Gloria, Daniel ; Ghibaudo, Gérard

Author_Institution

Technol. Platform Sustaining/Electr. Characterization & Reliability, STMicroelectron., Crolles, France

Volume

47

Issue

5

fYear

2012

fDate

5/1/2012 12:00:00 AM

Firstpage

1075

Lastpage

1083

Abstract

In the framework of MOSFET reliability for RF/AMS applications, a deep investigation of RF parameters degradation is performed. An innovative flow, composed of DC and RF stresses with DC and RF aging characterization, is presented. Degradation kinetics of main parameters are physically explained and modeled using PSP compact model to predict the behavior of stressed devices.

Keywords

MOSFET; ageing; semiconductor device reliability; DC aging characterization; MOSFET; PSP compact model; RF aging characterization; RF parameters degradation; RF stresses; RF-AMS applications; aging prediction; analog-mixed-signal applications; degradation kinetics; innovative flow; modeling solution; reliability characterization; size 40 nm; stressed devices; Aging; Degradation; Hot carriers; Radio frequency; Reliability; Scattering parameters; Stress; Aging; MOSFET; PSP; compact model; hot carrier; load-pull; model; radio frequency; reliability;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/JSSC.2012.2185549

Filename

6155064