Microwave characteristics of high-speed traveling-wave electrooptic modulators on III-V semiconductors

Author

Wu, Ke ; Tong, Cheuk-Yu Edward ; Vahldieck, Ruediger

Author_Institution

Dept. of Electr. & Comput. Eng., Victoria Univ., BC, Canada

Volume

9

Issue

10

fYear

1991

fDate

10/1/1991 12:00:00 AM

Firstpage

1295

Lastpage

1304

Abstract

Microwave characteristics of III-V semiconductor traveling wave electrooptic modulators were studied rigorously by using the method of lines. This approach makes it possible to construct a complete computer model of double-rib, multilayer strip waveguide modulators which are out of reach of the classical methods. Both p-i-n junction and Schottky-barrier junction controlled devices have been investigated. The fringing microwave field has been found to play an important role in improving the modulator bandwidth. For the first time, a nonperfect electrode of finite thickness has been modeled. The method of lines algorithm has proved to be a valuable CAD tool for design and optimization of high-speed modulators

Keywords

electro-optical devices; integrated optics; integrated optoelectronics; optical modulation; optical waveguides; physics computing; CAD tool; III-V semiconductors; Schottky-barrier junction; computer model; double-rib; finite thickness; fringing microwave field; high-speed traveling-wave electrooptic modulators; method of lines; modulator bandwidth; modulator design; multilayer strip waveguide modulators; nonperfect electrode; p-i-n junction; Bandwidth; Electrodes; Electrooptic modulators; III-V semiconductor materials; Microwave devices; Microwave theory and techniques; Nonhomogeneous media; PIN photodiodes; Semiconductor waveguides; Strips;

fLanguage

English

Journal_Title

Lightwave Technology, Journal of

Publisher

ieee

ISSN

0733-8724

Type

jour

DOI

10.1109/50.90927

Filename

90927