Title :
High-breakdown voltage Al0.66In0.34As0.85Sb0.15/In 0.75Ga0.25As/InP heterostructure field-effect transistors
Author :
Su, Jan-Shing ; Hsu, Wei-Chou ; Lin, Dong-Tsuen ; Lin, Wei ; Shiao, Hung-Pin ; Lin, Yu-Shyan ; Huang, Jean-Zen ; Chou, Piin-Jye
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
fDate :
10/24/1996 12:00:00 AM
Abstract :
Al0.66In0.34As0.85Sb0.15 /In0.75Ga0.25As/InP heterostructure field-effect transistors (HFETs) with high breakdown voltage have been successfully fabricated by low-pressure metal organic chemical vapour deposition (LP-MOCVD). By virtue of an Al0.66In0.34As0.85Sb0.15 Schottky layer and an inverted δ-doped carrier supplier, a gate-to-drain breakdown voltage as high as 40 V can be obtained. Moreover. The temperature dependence of breakdown voltage shows a negative temperature coefficient
Keywords :
III-V semiconductors; Schottky barriers; aluminium compounds; doping profiles; electric breakdown; gallium arsenide; indium compounds; leakage currents; power field effect transistors; semiconductor growth; thermionic emission; tunnelling; vapour phase epitaxial growth; 40 V; Al0.66In0.34As0.85Sb0.15-In0.75Ga0.25As-InP; HFET; LP-MOCVD; Schottky layer; chemical vapour deposition; heterostructure field-effect transistors; high breakdown voltage; inverted δ-doped carrier supplier; low-pressure MOCVD; metal organic CVD; negative temperature coefficient; temperature dependence;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19961372
