Title :
Highly stable microwave performance of InP/InGaAs HIGFETs
Author :
Martin, E.A. ; Aina, O.A. ; Iliadis, A.A. ; Mattingly, M.R. ; Hempfling, E.
Author_Institution :
Allied-Signal Aerosp. Co., Columbia, MD, USA
fDate :
8/1/1990 12:00:00 AM
Abstract :
The fabrication and microwave performance of InP/InGaAs heterojunction insulated-gate FETs (HIGFETs) using plasma-enhanced chemical vapor deposition (PECVD)-deposited SiO2 as the gate insulator are discussed. Extrinsic transconductances as high as 240 mS/mm were obtained. Although these devices had a drain current drift of 20% under DC bias, when operated at 5 GHz they exhibited negligible drain current drift. The observation of high transconductance and stable microwave performance makes these HIGFETs ideal candidates for microwave power applications
Keywords :
III-V semiconductors; chemical vapour deposition; gallium arsenide; indium compounds; insulated gate field effect transistors; solid-state microwave devices; 5 GHz; HIGFETs; InP-InGaAs; PECVD; SHF; SiO2 gate dielectric; fabrication; gate insulator; heterojunction insulated-gate FETs; microwave performance; microwave power applications; plasma-enhanced chemical vapor deposition; semiconductors; transconductance; FETs; Fabrication; Heterojunctions; Indium gallium arsenide; Indium phosphide; Insulation; Microwave devices; Plasma chemistry; Plasma devices; Plasma stability;
Journal_Title :
Electron Devices, IEEE Transactions on
