Title :
Carrier lifetime measurement by ramp recovery of p-i-n diodes
Author :
Gamal, Salah H. ; Morel, H. ; Chante, J.P.
Author_Institution :
INSA de Lyon, Villeurbanne, France
fDate :
8/1/1990 12:00:00 AM
Abstract :
A method for measuring carrier lifetime in the base of power p-i-n diodes is introduced. The method is based on ramp recovery of power diodes. Neither the charge left at the end of the first phase of the recovery process, nor the based width are needed to determine lifetime. Moreover, information about the base width of relatively short-base diodes can be obtained
Keywords :
carrier lifetime; p-i-n diodes; time measurement; base width measurement; carrier lifetime measurement; power p-i-n diodes; ramp recovery of power diodes; Charge carrier lifetime; Charge carrier processes; Electron mobility; Inductance; P-i-n diodes; PIN photodiodes; Power measurement; Rectifiers; Virtual reality; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
