Influence of Illumination on the Negative-Bias Stability of Transparent Hafnium–Indium–Zinc Oxide Thin-Film Transistors

Author

Park, Joon Seok ; Kim, Tae Sang ; Son, Kyoung Seok ; Jung, Ji Sim ; Lee, Kwang-Hee ; Kwon, Jang-Yeon ; Koo, Bonwon ; Lee, Sangyoon

Author_Institution

Display Lab., Samsung Adv. Inst. of Technol., Yongin, South Korea

Volume

31

Issue

5

fYear

2010

fDate

5/1/2010 12:00:00 AM

Firstpage

440

Lastpage

442

Abstract

The stability of transparent hafnium-indium-zinc oxide (HIZO) thin-film transistors (TFTs) was investigated under negative-bias stress conditions. TFTs that incorporate transparent electrode materials such as indium-tin oxide or indium-zinc oxide were studied, and the bias stress experiments showed that transparent TFTs undergo severe degradation (negative shift in threshold voltage VT) with simultaneous exposure to white light, in comparison with the results obtained in dark. The time evolution of VT indicates that the deterioration under illumination occurs mainly by the trapping of photogenerated carriers near the HIZO/dielectric interface.

Keywords

hafnium compounds; stability; thin film transistors; negative-bias stability; transparent electrode materials; transparent thin-film transistors; Hafnium–indium–zinc oxide (HIZO); negative bias illumination stress; thin-film transistor (TFT); transparent display;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2010.2043050

Filename

5438732