• DocumentCode
    1452668
  • Title

    Hazards of dichlorosilane exhaust deposits from the high-temperature oxide process as determined by FT-ICR mass spectrometry

  • Author

    Jarek, Russell L. ; Thornberg, Steven M.

  • Author_Institution
    Sandia Nat. Labs., Albuquerque, NM, USA
  • Volume
    14
  • Issue
    1
  • fYear
    2001
  • fDate
    2/1/2001 12:00:00 AM
  • Firstpage
    20
  • Lastpage
    25
  • Abstract
    Gas samples from the exhaust system of tools employing dichlorosilane (DCS) in high temperature oxide (HTO) deposition that produced flammable solid deposits have been analyzed by Fourier transform ion cyclotron resonance (FT-ICR) mass spectrometry. Exact mass determinations by the high-resolution FT-ICR allowed the identification of various polysiloxane species present in such an exhaust flow. Ion-molecule reactions of dichlorosilyl cation with water and DCS indicate the preferred reaction pathway is disiloxane formation through HCl loss, a precursor to the highly flammable polysiloxanes that were identified in the gaseous exhaust and in exhaust deposits. Minimization of these hazardous deposits is discussed with respect to water contamination, dilution factor and water scrubbing of the HTO exhaust
  • Keywords
    Fourier transform spectroscopy; high-temperature techniques; mass spectroscopic chemical analysis; oxidation; safety; water pollution; FT-ICR mass spectrometry; Fourier transform ion cyclotron resonance; dichlorosilane exhaust deposits; dilution factor; gaseous exhaust; high-temperature oxide process; ion-molecule reactions; polysiloxane species; preferred reaction pathway; water contamination; water scrubbing; Cyclotrons; Distributed control; Exhaust systems; Flammability; Fourier transforms; Hazards; Resonance; Solids; Temperature; Water pollution;
  • fLanguage
    English
  • Journal_Title
    Semiconductor Manufacturing, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0894-6507
  • Type

    jour

  • DOI
    10.1109/66.909651
  • Filename
    909651