DocumentCode
1452668
Title
Hazards of dichlorosilane exhaust deposits from the high-temperature oxide process as determined by FT-ICR mass spectrometry
Author
Jarek, Russell L. ; Thornberg, Steven M.
Author_Institution
Sandia Nat. Labs., Albuquerque, NM, USA
Volume
14
Issue
1
fYear
2001
fDate
2/1/2001 12:00:00 AM
Firstpage
20
Lastpage
25
Abstract
Gas samples from the exhaust system of tools employing dichlorosilane (DCS) in high temperature oxide (HTO) deposition that produced flammable solid deposits have been analyzed by Fourier transform ion cyclotron resonance (FT-ICR) mass spectrometry. Exact mass determinations by the high-resolution FT-ICR allowed the identification of various polysiloxane species present in such an exhaust flow. Ion-molecule reactions of dichlorosilyl cation with water and DCS indicate the preferred reaction pathway is disiloxane formation through HCl loss, a precursor to the highly flammable polysiloxanes that were identified in the gaseous exhaust and in exhaust deposits. Minimization of these hazardous deposits is discussed with respect to water contamination, dilution factor and water scrubbing of the HTO exhaust
Keywords
Fourier transform spectroscopy; high-temperature techniques; mass spectroscopic chemical analysis; oxidation; safety; water pollution; FT-ICR mass spectrometry; Fourier transform ion cyclotron resonance; dichlorosilane exhaust deposits; dilution factor; gaseous exhaust; high-temperature oxide process; ion-molecule reactions; polysiloxane species; preferred reaction pathway; water contamination; water scrubbing; Cyclotrons; Distributed control; Exhaust systems; Flammability; Fourier transforms; Hazards; Resonance; Solids; Temperature; Water pollution;
fLanguage
English
Journal_Title
Semiconductor Manufacturing, IEEE Transactions on
Publisher
ieee
ISSN
0894-6507
Type
jour
DOI
10.1109/66.909651
Filename
909651
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