Effect of Metallic Composition on Electrical Properties of Solution-Processed Indium-Gallium-Zinc-Oxide Thin-Film Transistors

Author

Kim, Yong-Hoon ; Han, Min-Koo ; Han, Jeong-In ; Park, Sung Kyu

Author_Institution

Flexible Display Res. Center, Korea Electron. Technol. Inst., Seongnam, South Korea

Volume

57

Issue

5

fYear

2010

fDate

5/1/2010 12:00:00 AM

Firstpage

1009

Lastpage

1014

Abstract

We report the combinatorial study on surface morphology and electrical properties of solution-processed amorphous indium-gallium-zinc-oxide (a- IGZO) thin-film transistors (TFTs). The sol-gel-processed a-IGZO thin films typically have shown an amorphous structure and critical dependence of mobility, carrier concentration, and surface roughness on the In, Ga, and Zn molar ratio in the solution phase. Based on efficient control of the metallic components from the sol-gel process, the solution-processed a- IGZOT FTs with a mobility of 0.5-2 cm²/V Â·s, on/off current ratio > 10⁷, and a subthreshold slope of as steep as 1.5 V/dec were obtained.

Keywords

II-VI semiconductors; amorphous semiconductors; carrier density; carrier mobility; gallium compounds; indium compounds; semiconductor growth; semiconductor thin films; sol-gel processing; surface morphology; surface roughness; thin film transistors; wide band gap semiconductors; zinc compounds; InGaZnO; amorphous structure; amorphous thin-film transistors; carrier concentration; electrical properties; metallic composition; molar ratio; sol-gel process; solution phase; surface morphology; surface roughness; Amorphous materials; Displays; Electrodes; Rough surfaces; Spinning; Surface morphology; Surface roughness; Temperature; Thin film transistors; Water; $a$-IGZO ; metallic composition; solution-process; thin-film transistor;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2010.2043179

Filename

5438779