Read versus flat doping profile structures for the realization of reliable high-power, high-efficiency 94 GHz IMPATT sources

An investigation of the potential RF performance of various types of silicon IMPATT homojunction structures was carried out to identify the most efficient type for reliable high-power, high-efficiency CW generation in the 94 GHz window. The study used an IMPATT oscillator model accounting, in a self-consistent manner, for both thermal limitation and diode impedance matching. The main result is that in contrast to lower operating frequencies, the realization of a Read doping profile does not improve the RF performance level compared to structures with a flat doping profile. Operating conditions were optimized for high RF emitted performance conditions. In addition, the fundamental effects on RF performance of both the diode thermal resistance and RF losses have been quantified