Title :
1 kW peak power 808 nm 2-D laser diode array
Author :
Rosen, A. ; Stabile, P. ; Janton, W. ; McShea, J.C. ; Rosenberg, A. ; Petheram, J.C. ; Miller, H.G. ; Sprague, J.W. ; Gilman, J.M.
Author_Institution :
David Sarnoff Res. Center, Princeton, NJ, USA
Abstract :
A 2-D laser array delivering a peak power of 1 kW, with an overall efficiency of 33.4% is described. The operating parameters of this array are a 100- mu s pulse width, a 15-Hz reception rate, a temperature of 16 degrees C, and at the nominal wavelengths of 808 nm. The spectrometer used in the system is an ISA model HR-320 monochromator. In conjunction with the PAR mode 1453 1024-element array, a resolution of 0.6 nm/element is achieved which allows a 61 nm range to be displayed at any one time.<>
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; laser transitions; semiconductor junction lasers; 1 kW; 100 mus; 16 degC; 2D laser diode array; 33.4 percent; 808 nm; AlGaAs-GaAs; spectrometer; Bars; Diode lasers; Gallium arsenide; Heat sinks; Optical arrays; Optical materials; Semiconductor laser arrays; Surface emitting lasers; Thermal conductivity; Two dimensional displays;
Journal_Title :
Photonics Technology Letters, IEEE
