DocumentCode :
1452814
Title :
Diffusion-limited etching for compact, low-loss semiconductor integrated optics
Author :
Deri, R.J. ; Seto, M. ; Yi-Yan, A. ; Colas, E. ; Bhat, R.
Author_Institution :
Bellcore, Red Bank, NJ, USA
Volume :
1
Issue :
2
fYear :
1989
Firstpage :
46
Lastpage :
48
Abstract :
It is shown that diffusion-limited wet chemical etching can be used to fabricated single-mode GaAs/AlGaAs rib waveguides suitable for compact circular waveguide bends (300- mu m radius). The waveguides exhibit lower propagation losses (1-4 dB/cm at 1.52- mu m wavelength) than previously reported guides fabricated for compact bend applications by dry etching. To study the radius dependence of waveguide bend loss, a set of nested 90 degrees circular bends was fabricated simultaneously on a single chip.<>
Keywords :
III-V semiconductors; aluminium compounds; bending; etching; gallium arsenide; integrated optics; optical losses; optical waveguides; optical workshop techniques; AlGaAs; GaAs-AlGaAs rib waveguides; III-V semiconductors; compact circular waveguide bends; diffusion-limited wet chemical etching; propagation losses; radius dependence; single-mode waveguides; waveguide bend loss; Dry etching; Gallium arsenide; Integrated optics; Optical scattering; Optical signal processing; Optical waveguides; Propagation losses; Ribs; Semiconductor waveguides; Wet etching;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/68.91005
Filename :
91005
Link To Document :
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