Diffusion-limited etching for compact, low-loss semiconductor integrated optics

Author

Deri, R.J. ; Seto, M. ; Yi-Yan, A. ; Colas, E. ; Bhat, R.

Author_Institution

Bellcore, Red Bank, NJ, USA

Volume

1

Issue

2

fYear

1989

Firstpage

46

Lastpage

48

Abstract

It is shown that diffusion-limited wet chemical etching can be used to fabricated single-mode GaAs/AlGaAs rib waveguides suitable for compact circular waveguide bends (300- mu m radius). The waveguides exhibit lower propagation losses (1-4 dB/cm at 1.52- mu m wavelength) than previously reported guides fabricated for compact bend applications by dry etching. To study the radius dependence of waveguide bend loss, a set of nested 90 degrees circular bends was fabricated simultaneously on a single chip.<>

Keywords

III-V semiconductors; aluminium compounds; bending; etching; gallium arsenide; integrated optics; optical losses; optical waveguides; optical workshop techniques; AlGaAs; GaAs-AlGaAs rib waveguides; III-V semiconductors; compact circular waveguide bends; diffusion-limited wet chemical etching; propagation losses; radius dependence; single-mode waveguides; waveguide bend loss; Dry etching; Gallium arsenide; Integrated optics; Optical scattering; Optical signal processing; Optical waveguides; Propagation losses; Ribs; Semiconductor waveguides; Wet etching;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.91005

Filename

91005