Title :
Easily manufactured high-speed back-illuminated GaInAs/InP p-i-n photodiode
Author :
Makiuchi, M. ; Hamaguchi, H. ; Mikawa, T. ; Wada, O.
Author_Institution :
Fujitsu Lab. Ltd., Atsugi, Japan
fDate :
6/1/1991 12:00:00 AM
Abstract :
A back-illuminated planar GaInAs/InP p-i-n photodiode has been fabricated with a simple fabrication process to obtain a high-speed detector. The photodiode has a capacitance as low as 54 fF, a dark current of about 3 pA, and a quantum efficiency of 74% at a 1.55- mu m wavelength. A cutoff frequency of 31 GHz was obtained when the photocurrent was about 500 mu A and the bias voltage was -10 V.<>
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; infrared detectors; p-i-n diodes; photodetectors; photodiodes; 1.55 micron; 3 pA; 31 GHz; 500 muA; 54 fF; III-V semiconductors; back illuminated planar GaInAs-InP photodiode; bias voltage; capacitance; cutoff frequency; dark current; fabrication process; high-speed detector; p-i-n photodiode; photocurrent; quantum efficiency; wavelength; Cutoff frequency; Dark current; Detectors; Fabrication; Indium phosphide; Manufacturing; PIN photodiodes; Photoconductivity; Quantum capacitance; Voltage;
Journal_Title :
Photonics Technology Letters, IEEE
