1.3 mu m InGaAs MSM photodetector with abrupt InGaAs/AlInAs interface

Author

Burroughes, J.H. ; Hargis, M.

Author_Institution

IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA

Volume

3

Issue

6

fYear

1991

fDate

6/1/1991 12:00:00 AM

Firstpage

532

Lastpage

534

Abstract

The authors have fabricated long-wavelength abrupt-junction InGaAs/AlInAs metal-semiconductor-metal photodetectors that are potentially compatible with AlInAs/InGaAs H-MESFETs. The detectors have nanoampere dark currents and low capacitance. The responsivity at 10 MHz is 0.32 A/W, corresponding to at least 90% internal collection efficiency. The device performance limitations due to charge storage at the InGaAs/AlInAs interface are discussed, and it is shown that despite charge pile up, high data rates (>3 GHz) have been achieved at low bias voltages, provided the incident intensity is low.<>

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; infrared detectors; metal-semiconductor-metal structures; photodetectors; 1.3 micron; InGaAs-AlInAs interface; bias voltages; capacitance; charge pile up; charge storage; incident intensity; internal collection efficiency; long-wavelength abrupt-junction InGaAs/AlInAs metal-semiconductor-metal photodetectors; nanoampere dark currents; performance limitations; responsivity; Capacitance; Dark current; Fingers; Gallium arsenide; Indium gallium arsenide; Indium phosphide; PIN photodiodes; Photodetectors; Substrates; Wet etching;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.91025

Filename

91025