Title :
Monolithic balanced p-i-n/HBT photoreceiver for coherent optical heterodyne communications
Author :
Chandrasekhar, S. ; Glance, B. ; Dentai, F.G. ; Joyner, C.H. ; Qua, G.J. ; Sulhoff, J.W.
Author_Institution :
AT&T Bell Lab., Holmdel, NJ, USA
fDate :
6/1/1991 12:00:00 AM
Abstract :
Two InGaAs p-i-n photodetectors connected in a balanced configuration have been monolithically integrated with a transimpedance preamplifier made from InP-InGaAs heterojunction bipolar transistors (HBTs) to realize a balanced optoelectronic integrated circuit (OEIC) receiver. The receiver, with a bandwidth of 3 GHz and a common mode rejection of 25 dB, has a sensitivity of -49 dBm at a bit error rate of 10/sup 9/ under NRZ FSK reception at 200 Mb/s.<>
Keywords :
III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; integrated optoelectronics; optical communication equipment; p-i-n diodes; photodetectors; photodiodes; receivers; 200 Mbit/s; 3 GHz; InGaAs; InGaAs p-i-n photodetectors; InP-InGaAs; NRZ FSK reception; balanced optoelectronic integrated circuit; balanced p-i-n/HBT photoreceiver; bit error rate; coherent optical heterodyne communications; common mode rejection; heterojunction bipolar transistors; monolithically integrated; semiconductors; sensitivity; transimpedance preamplifier; Bipolar integrated circuits; Heterojunction bipolar transistors; Indium gallium arsenide; Monolithic integrated circuits; Optical mixing; Optical receivers; Optical sensors; PIN photodiodes; Photodetectors; Preamplifiers;
Journal_Title :
Photonics Technology Letters, IEEE
