Title :
The effect of post-oxide annealing on H2O2-grown Al2O3, AlGaN/GaN polarization charges and MOS-HEMT performances
Author :
Han-Yin Liu ; Wei-Chou Hsu ; Ching-Sung Lee ; Bo-Yi Chou ; Wen-Chia Ou ; Yi-Hsuan Wang ; Wei-Fan Chen
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
Abstract :
This work investigates the effect of post oxide annealing (POA) on the AlGaN/GaN MOS-HEMT with a gate oxide grown by the H2O2 oxidation technique. The experimental results suggest that the gate dielectric layer with the POA treatment improves the dielectric material quality and MOS-HEMT performances. The dielectric breakdown field (EBD) of Al2O3 is improved from 6.5 to 7.9 MV/cm. In addition, the hysteresis measurement suggests that the fixed charges in Al2O3 and the interface charges (Dit) at Al2O3/AlGaN interface are reduced. This work also finds that the POA affects polarization charge density and improves MOS-HEMT performances.
Keywords :
III-V semiconductors; MOSFET; alumina; annealing; dielectric materials; gallium compounds; high electron mobility transistors; hydrogen compounds; oxidation; wide band gap semiconductors; Al2O3; AlGaN-GaN; H2O2; MOS-HEMT performances; POA treatment; dielectric breakdown field; dielectric material quality; fixed charges; gate dielectric layer; gate oxide; hysteresis measurement; interface charges; oxidation technique; polarization charge density; post oxide annealing; Aluminum gallium nitride; Aluminum oxide; Dielectrics; Gallium nitride; HEMTs; Logic gates; Oxidation; AlGaN/GaN; MOS-HEMT; gate dielectric layer; post oxide annealing;
Conference_Titel :
Information Science, Electronics and Electrical Engineering (ISEEE), 2014 International Conference on
Conference_Location :
Sapporo
Print_ISBN :
978-1-4799-3196-5
DOI :
10.1109/InfoSEEE.2014.6948183
