Picosecond GaAs monolithic optoelectronic sampling circuit

Author

Kamegawa, M. ; Giboney, K. ; Karin, J. ; Allen, S. ; Case, M. ; Yu, R. ; Rodwell, M.J.W. ; Bowers, J.E.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA

Volume

3

Issue

6

fYear

1991

fDate

6/1/1991 12:00:00 AM

Firstpage

567

Lastpage

569

Abstract

An optoelectronic sampling circuit has been fabricated for direct measurement of picosecond optical waveforms. The monolithic device incorporates a GaAs Schottky photodetector and a high-speed sampling circuit gated by a nonlinear transmission line strobe pulse generator. Excited by a 850-nm mode-locked dye laser, a 5.6-ps FWHM impulse response is measured; the authors estimate a deconvolved impulse response of approximately 4.5 ps FWHM.<>

Keywords

III-V semiconductors; Schottky-barrier diodes; analogue-digital conversion; gallium arsenide; high-speed optical techniques; integrated optoelectronics; photodiodes; signal processing equipment; 4.5 ps; 5.6 ps; 850 nm; GaAs; Schottky photodetector; deconvolved impulse response; direct measurement; high-speed sampling circuit; mode-locked dye laser; monolithic device; nonlinear transmission line strobe pulse generator; optoelectronic sampling circuit; picosecond optical waveforms; semiconductors; Distributed parameter circuits; Gallium arsenide; High speed optical techniques; Laser excitation; Nonlinear optical devices; Nonlinear optics; Photodetectors; Pulse generation; Sampling methods; Transmission line measurements;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.91037

Filename

91037