Title :
2.0 ps, 150 GHz GaAs monolithic photodiode and all-electronic sampler
Author :
Özbay, E. ; Li, K.D. ; Bloom, D.M.
Author_Institution :
Edward L. Ginzton Lab., Stanford Univ., CA, USA
fDate :
6/1/1991 12:00:00 AM
Abstract :
An ultrafast GaAs Schottky photodiode has been monolithically integrated with an all-electronic sampler. The high-speed photodiode-electronic-sampling circuit has a temporal response of 2.0 ps full-width-at-half-maximum (FWHM) corresponding to a 3-dB bandwidth of 150 GHz. The photodiode has an external quantum efficiency of 33%.<>
Keywords :
III-V semiconductors; Schottky-barrier diodes; analogue-digital conversion; gallium arsenide; high-speed optical techniques; integrated optoelectronics; photodiodes; signal processing equipment; 2 ps; 2.0 GHz; 33 percent; all-electronic sampler; external quantum efficiency; high-speed photodiode-electronic-sampling circuit; monolithically integrated; semiconductors; temporal response; ultrafast GaAs Schottky photodiode; Bandwidth; Circuits; Deconvolution; Detectors; Gallium arsenide; Indium gallium arsenide; Photodetectors; Photodiodes; Pulse measurements; Voltage;
Journal_Title :
Photonics Technology Letters, IEEE
