DocumentCode :
1453111
Title :
PD characteristics as a stochastic process and its integral equation under sinusoidal voltage
Author :
Okamoto, T. ; Kato, T. ; Yokomizu, Y. ; Suzuoki, Y. ; Tanaka, T.
Author_Institution :
Center for Integrated Res. in Sci. & Eng., Nagoya Univ., Japan
Volume :
8
Issue :
1
fYear :
2001
fDate :
3/1/2001 12:00:00 AM
Firstpage :
82
Lastpage :
90
Abstract :
This paper proposes an integral equation to describe the stochastic fluctuation of partial discharge (PD) occurrence under sinusoidal waveform voltage conditions based on a simple PD model (an equivalent circuit model). The stochastic behavior of PD fluctuation is assumed to arise from the fluctuation of PD delay time after the discharge inception voltage is built up across a discharge gap. The distribution of delay time is assumed to obey an exponential distribution and the dependence of the delay time on the overvoltage is assumed to be expressed by an exponential function of the overvoltage. The integral equation has been solved numerically under the low voltage condition in which only one PD can occur in a half AC voltage cycle. It is found that the proposed integral equation can provide the basic characteristics such as PD pulse repetition rate vs. applied voltage phase angle
Keywords :
equivalent circuits; exponential distribution; fluctuations; insulation testing; integral equations; overvoltage; partial discharge measurement; stochastic processes; PD characteristics; PD delay time fluctuation; applied voltage phase angle; discharge gap; discharge inception voltage; equivalent circuit model; exponential distribution; half AC voltage cycle; insulation diagnosis; integral equation; overvoltage dependence; sinusoidal voltage; stochastic fluctuation; stochastic process; Data processing; Fluctuations; Insulation; Integral equations; Partial discharges; Pulse measurements; Pulse width modulation; Solids; Stochastic processes; Voltage;
fLanguage :
English
Journal_Title :
Dielectrics and Electrical Insulation, IEEE Transactions on
Publisher :
ieee
ISSN :
1070-9878
Type :
jour
DOI :
10.1109/94.910429
Filename :
910429
Link To Document :
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