New discretization scheme for two-dimensional semiconductor device simulation on triangular grid

Author

Patil, Mahesh B.

Author_Institution

Dept. of Electr. Eng., Indian Inst. of Technol., Kanpur, India

Volume

17

Issue

11

fYear

1998

fDate

11/1/1998 12:00:00 AM

Firstpage

1160

Lastpage

1165

Abstract

A new discretization scheme for semiconductor device simulation on triangular grids is proposed. Simulation examples are presented to show that solutions obtained with the commonly used box discretization scheme differ significantly depending on whether or not the grid contains obtuse triangles. On the other hand, it is shown that the new scheme is relatively insensitive to the presence of obtuse triangles. The reasons for the inconsistent behavior of the box scheme are examined. Some comments are made regarding the numerical efficiency of the new scheme as compared to the box scheme

Keywords

digital simulation; discrete systems; iterative methods; semiconductor device models; discretization scheme; numerical efficiency; obtuse triangles; semiconductor device models; triangular grid; two-dimensional semiconductor device simulation; Charge carrier processes; Current density; Fabrication; Geometry; Iterative methods; Nonlinear equations; Poisson equations; Predictive models; Semiconductor devices; Steady-state;

fLanguage

English

Journal_Title

Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on

Publisher

ieee

ISSN

0278-0070

Type

jour

DOI

10.1109/43.736188

Filename

736188