Title :
New discretization scheme for two-dimensional semiconductor device simulation on triangular grid
Author :
Patil, Mahesh B.
Author_Institution :
Dept. of Electr. Eng., Indian Inst. of Technol., Kanpur, India
fDate :
11/1/1998 12:00:00 AM
Abstract :
A new discretization scheme for semiconductor device simulation on triangular grids is proposed. Simulation examples are presented to show that solutions obtained with the commonly used box discretization scheme differ significantly depending on whether or not the grid contains obtuse triangles. On the other hand, it is shown that the new scheme is relatively insensitive to the presence of obtuse triangles. The reasons for the inconsistent behavior of the box scheme are examined. Some comments are made regarding the numerical efficiency of the new scheme as compared to the box scheme
Keywords :
digital simulation; discrete systems; iterative methods; semiconductor device models; discretization scheme; numerical efficiency; obtuse triangles; semiconductor device models; triangular grid; two-dimensional semiconductor device simulation; Charge carrier processes; Current density; Fabrication; Geometry; Iterative methods; Nonlinear equations; Poisson equations; Predictive models; Semiconductor devices; Steady-state;
Journal_Title :
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
