Theoretical analysis of lateral modes in broad-area semiconductor lasers with profiled reflectivity output facets

Author

Szymansi, M. ; Kubica, Jacek M. ; Szczepanski, Pawel

Author_Institution

Inst. of Electron Technol., Warsaw, Poland

Volume

37

Issue

3

fYear

2001

fDate

3/1/2001 12:00:00 AM

Firstpage

430

Lastpage

438

Abstract

This paper provides a theoretical analysis of the near-threshold behavior of broad-area lasers with profiled reflectivity output facets. Threshold currents and far-field patterns of the lateral modes are calculated according to two models. The first model assumes that the modes are determined by the effective lateral waveguide, while the second one is based on the modes of an open resonator. Single- and three-stripe mirror configurations have been considered. The main goal of the analysis is to identify the lateral guiding mechanism in such lasers and to assess the influence of the mirror configuration on thresholds for single- and multimode operation and on beam characteristics

Keywords

laser beams; laser cavity resonators; laser mirrors; laser theory; reflectivity; semiconductor device models; semiconductor lasers; waveguide lasers; beam characteristics; broad-area semiconductor lasers; effective lateral waveguide; far-field patterns; lateral guiding mechanism; lateral modes; multimode operation; near-threshold behavior; open resonator; profiled reflectivity output facets; single-stripe mirror configurations; theoretical analysis; three-stripe mirror configurations; threshold currents; Laser beams; Laser cavity resonators; Laser modes; Laser theory; Mirrors; Optical resonators; Pump lasers; Reflectivity; Semiconductor lasers; Waveguide lasers;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.910454

Filename

910454