Title :
A device model for metal-semiconductor-metal photodetectors and its applications to optoelectronic integrated circuit simulation
Author_Institution :
NTT LSI, Atsugi, Japan
fDate :
9/1/1990 12:00:00 AM
Abstract :
Poisson´s equation, current-continuity equations, and a rate equation for charged traps are numerically solved in two dimensions, to explain the behavior of photogenerated carriers and electric fields in GaAs metal-semiconductor-metal photoconductors (MSM PDs). An analytical model is proposed on the basis of these solutions and implemented in a SPICE-like circuit simulator. Simulated transient responses for an MSM PD and a monolithic optoelectronic receiver, consisting of an MSM PD and a MESFET transimpedance amplifier, are in good agreement with measured results
Keywords :
III-V semiconductors; gallium arsenide; integrated optoelectronics; metal-semiconductor-metal structures; numerical analysis; photodetectors; semiconductor device models; transient response; GaAs; MESFET transimpedance amplifier; SPICE-like circuit simulator; analytical model; charged traps; current-continuity equations; electric fields; metal-semiconductor-metal photodetectors; monolithic optoelectronic receiver; optoelectronic integrated circuit simulation; photogenerated carriers; poisson equation; rate equation; transient responses; Analytical models; Circuit simulation; Diode lasers; Gallium arsenide; Geometry; MESFETs; Optical interconnections; Optical receivers; Photodetectors; Poisson equations;
Journal_Title :
Electron Devices, IEEE Transactions on
