A device model for metal-semiconductor-metal photodetectors and its applications to optoelectronic integrated circuit simulation

Author

Sano, Eiichi

Author_Institution

NTT LSI, Atsugi, Japan

Volume

37

Issue

9

fYear

1990

fDate

9/1/1990 12:00:00 AM

Firstpage

1964

Lastpage

1968

Abstract

Poisson´s equation, current-continuity equations, and a rate equation for charged traps are numerically solved in two dimensions, to explain the behavior of photogenerated carriers and electric fields in GaAs metal-semiconductor-metal photoconductors (MSM PDs). An analytical model is proposed on the basis of these solutions and implemented in a SPICE-like circuit simulator. Simulated transient responses for an MSM PD and a monolithic optoelectronic receiver, consisting of an MSM PD and a MESFET transimpedance amplifier, are in good agreement with measured results

Keywords

III-V semiconductors; gallium arsenide; integrated optoelectronics; metal-semiconductor-metal structures; numerical analysis; photodetectors; semiconductor device models; transient response; GaAs; MESFET transimpedance amplifier; SPICE-like circuit simulator; analytical model; charged traps; current-continuity equations; electric fields; metal-semiconductor-metal photodetectors; monolithic optoelectronic receiver; optoelectronic integrated circuit simulation; photogenerated carriers; poisson equation; rate equation; transient responses; Analytical models; Circuit simulation; Diode lasers; Gallium arsenide; Geometry; MESFETs; Optical interconnections; Optical receivers; Photodetectors; Poisson equations;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.57157

Filename

57157