Title :
Megaelectronvolt phosphorus implantation for bipolar devices
Author :
Böhm, Hans-joachim ; Bernewitz, Lore ; Böhm, Willi R. ; Köpl, Rupert
Author_Institution :
Siemens AG, Munich, West Germany
fDate :
10/1/1988 12:00:00 AM
Abstract :
The use of megaelectronvolt phosphorus implantation in the formation of the buried layer of bipolar transistors was investigated. The main focus was on the reduction of the secondary defect density. The lowest defect density is obtained with annealing by rapid thermal processing (1150°C/60 s). Results on electrical characteristics of bipolar transistors with megaelectronvolt-implanted buried layers are presented and compared with those of conventional devices
Keywords :
annealing; bipolar transistors; ion implantation; 1150 degC; 60 s; P; annealing; bipolar devices; bipolar transistors; buried layer; electrical characteristics; megaelectronvolt implantation; rapid thermal processing; secondary defect density; BiCMOS integrated circuits; Bipolar transistors; Conductivity; Electric variables; Epitaxial layers; Heat treatment; Ion implantation; Rapid thermal annealing; Rapid thermal processing; Surface resistance;
Journal_Title :
Electron Devices, IEEE Transactions on
