DocumentCode :
1453345
Title :
Design and Characterization of a Room Temperature All-Solid-State Electronic Source Tunable From 2.48 to 2.75 THz
Author :
Maestrini, Alain ; Mehdi, Imran ; Siles, José V. ; Ward, John S. ; Lin, Robert ; Thomas, Bertrand ; Lee, Choonsup ; Gill, John ; Chattopadhyay, Goutam ; Schlecht, Erich ; Pearson, John ; Siegel, Peter
Author_Institution :
Univ. Pierre et Marie Curie - Paris 6, Paris, France
Volume :
2
Issue :
2
fYear :
2012
fDate :
3/1/2012 12:00:00 AM
Firstpage :
177
Lastpage :
185
Abstract :
We report on the design, fabrication and test of an all-solid-state, frequency agile source that produces over across the 2.48-2.75 THz band at room temperature. This frequency-multiplied source is driven by a W-band synthesizer followed by a power amplifier that delivers 350-450 mW (25.5-26.5 dBm) and a cascade of three balanced frequency triplers. The first stage tripler is based on four power-combined six-anode GaAs Schottky diode devices, and the second stage tripler is based on two four-anode GaAs devices. The output tripler uses a single unbiased device featuring two anodes monolithically integrated onto a thin GaAs membrane. The source delivers a record at 2.58 THz at room temperature. This frequency multiplied source is analyzed with a Fourier transform spectrometer (FTS) and the unwanted harmonics are found to be at least 29 dB below the desired signal. This source, when used as the local oscillator for a hot-electron bolometer mixer, will enable heterodyne instruments for future space missions to map the cosmologically-important 2.675 THz HD molecular line.
Keywords :
Fourier transform spectra; III-V semiconductors; Schottky diodes; frequency multipliers; frequency synthesizers; gallium arsenide; power amplifiers; submillimetre wave amplifiers; submillimetre wave diodes; Fourier transform spectrometer; GaAs; HD molecular line; W-band synthesizer; frequency 2.48 THz to 2.75 THz; frequency-multiplied source; heterodyne instruments; hot-electron bolometer mixer; local oscillator; power 350 mW to 450 mW; power amplifier; room temperature all-solid-state electronic source; single unbiased device; six-anode GaAs Schottky diode devices; temperature 293 K to 298 K; three balanced frequency triplers; Atmosphere; Frequency measurement; Harmonic analysis; Mixers; Power generation; Power measurement; Schottky diodes; Broadband terahertz (THz) source; Schottky diode; THz; frequency multiplier; frequency tripler; local oscillator; planar diode; power-combining; varactor;
fLanguage :
English
Journal_Title :
Terahertz Science and Technology, IEEE Transactions on
Publisher :
ieee
ISSN :
2156-342X
Type :
jour
DOI :
10.1109/TTHZ.2012.2183740
Filename :
6155632
Link To Document :
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