A broadband 10-GHz track-and-hold in Si/SiGe HBT technology

Author

Jensen, Jonathan C. ; Larson, Lawrence E.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., San Diego, La Jolla, CA, USA

Volume

36

Issue

3

fYear

2001

fDate

3/1/2001 12:00:00 AM

Firstpage

325

Lastpage

330

Abstract

High-performance multistage data converters and sub-sampling frequency downconverters typically require track and hold amplifiers (THAs) with high sampling rates and high linearity. This paper presents a THA for sub-sampling communications applications based on a diode bridge design with high-speed Schottky diodes and an improved current source approach for enhanced linearity. Implemented in a 45-GHz BiCMOS Si/SiGe process, this IC has an input bandwidth in excess of 10 GHz, consumes approximately 550 mW, and can accommodate input voltages up to 600 mV. With an input frequency of 8.05 GHz and a sampling frequency of 4 GHz, the THA has an IIP3 of 26 dBm and a spurious free dynamic range of 30 dB

Keywords

BiCMOS analogue integrated circuits; Ge-Si alloys; bridge circuits; elemental semiconductors; heterojunction bipolar transistors; sample and hold circuits; semiconductor materials; silicon; wideband amplifiers; 10 GHz; 45 GHz; 550 mW; 600 mV; BiCMOS IC; HF radio communication; Si-SiGe; Si/SiGe HBT technology; broadband track-and-hold amplifier; current source; high-speed Schottky diode bridge; linearity; multistage data converter; sampling rate; sub-sampling frequency downconverter; BiCMOS integrated circuits; Bridge circuits; Broadband amplifiers; Frequency conversion; Germanium silicon alloys; Heterojunction bipolar transistors; Linearity; Sampling methods; Schottky diodes; Silicon germanium;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.910470

Filename

910470