Title :
InP/InGaAsP Flattened Ring Lasers With Low-Loss Etched Beam Splitters
Author :
Parker, John S. ; Norberg, Erik J. ; Hung, Yung-Jr ; Kim, Byungchae ; Guzzon, Robert S. ; Coldren, Larry A.
Author_Institution :
Dept. of Electr. Eng., Univ. of California, Santa Barbara, CA, USA
fDate :
5/1/2011 12:00:00 AM
Abstract :
Compact flattened InP/InGaAsP multiquantum-well (MQW) resonators based on etched beam splitters (EBS) with 300- to 800-nm gaps and circumferences of 30-300 μm are demonstrated. Comparison of the EBS coupler reflection and transmission to 3-D finite-difference time-domain (FDTD) simulations shows good agreement in the wider EBS gap devices. Lasing is observed in 90-, 150-, and 300-μm length rings at threshold currents of 15, 14, and 29 mA, respectively.
Keywords :
III-V semiconductors; finite difference time-domain analysis; gallium arsenide; indium compounds; optical beam splitters; quantum well devices; semiconductor quantum wells; solid lasers; 3D finite-difference time-domain; EBS coupler reflection; EBS gap devices; FDTD; InP-InGaAsP; current 14 mA; current 15 mA; current 29 mA; flattened ring lasers; low-loss etched beam splitters; multiquantum-well resonators; size 300 nm to 800 nm; wavelength 150 nm; wavelength 300 nm; wavelength 90 nm; Couplers; Insertion loss; Laser beams; Optical filters; Optical waveguides; Reflection; Ring lasers; Beam splitter; integrated optics; optical resonators; photonic integrated circuits;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2011.2116777
