Self-Biased Microstrip Junction Circulator Based on Barium Ferrite Thin Films for Monolithic Microwave Integrated Circuits

Author

Peng, Bin ; Xu, Huizhong ; Li, Hui ; Zhang, Wenxu ; Wang, Yuan ; Zhang, Wanli

Author_Institution

State Key Lab. of Electron. Thin Films & Integrated Devices, Univ. of Electron. Sci. & Technol. of China, Chengdu, China

Volume

47

Issue

6

fYear

2011

fDate

6/1/2011 12:00:00 AM

Firstpage

1674

Lastpage

1677

Abstract

Barium hexaferrite thin films with thickness of 8 μm had been deposited on a sapphire substrate by radio-frequency magnetron sputtering. The results show that the grain size is about 2 μm in diameter. The coercivity is about 2.2 kOe and the saturation magnetization is about 4000 Gs with remanence ratio of 0.58. Based on the sputtered thin films, a self-biased microstrip junction circulator had been developed. The measured S-parameters indicate that a nonreciprocal effect greater than 10 dB occurs at about 26 GHz. The maximum isolation is 44 dB and the minimum insertion loss is 27 dB. The origins of the large insertion losses have been discussed.

Keywords

MMIC; S-parameters; barium compounds; coercive force; microwave circulators; remanence; sapphire; sputtering; thin films; Al₂O₃; BaFe₁₂O₁₉; S-parameters; barium ferrite thin films; coercivity; monolithic microwave integrated circuits; radiofrequency magnetron sputtering; remanence ratio; sapphire substrate; saturation magnetization; self-biased microstrip junction circulator; size 8 mum; Barium; Circulators; Ferrite films; Insertion loss; Magnetic resonance; Saturation magnetization; Barium ferrite films; junction circulators; self-biased;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/TMAG.2011.2116159

Filename

5715881