DocumentCode :
1453611
Title :
Self-Biased Microstrip Junction Circulator Based on Barium Ferrite Thin Films for Monolithic Microwave Integrated Circuits
Author :
Peng, Bin ; Xu, Huizhong ; Li, Hui ; Zhang, Wenxu ; Wang, Yuan ; Zhang, Wanli
Author_Institution :
State Key Lab. of Electron. Thin Films & Integrated Devices, Univ. of Electron. Sci. & Technol. of China, Chengdu, China
Volume :
47
Issue :
6
fYear :
2011
fDate :
6/1/2011 12:00:00 AM
Firstpage :
1674
Lastpage :
1677
Abstract :
Barium hexaferrite thin films with thickness of 8 μm had been deposited on a sapphire substrate by radio-frequency magnetron sputtering. The results show that the grain size is about 2 μm in diameter. The coercivity is about 2.2 kOe and the saturation magnetization is about 4000 Gs with remanence ratio of 0.58. Based on the sputtered thin films, a self-biased microstrip junction circulator had been developed. The measured S-parameters indicate that a nonreciprocal effect greater than 10 dB occurs at about 26 GHz. The maximum isolation is 44 dB and the minimum insertion loss is 27 dB. The origins of the large insertion losses have been discussed.
Keywords :
MMIC; S-parameters; barium compounds; coercive force; microwave circulators; remanence; sapphire; sputtering; thin films; Al2O3; BaFe12O19; S-parameters; barium ferrite thin films; coercivity; monolithic microwave integrated circuits; radiofrequency magnetron sputtering; remanence ratio; sapphire substrate; saturation magnetization; self-biased microstrip junction circulator; size 8 mum; Barium; Circulators; Ferrite films; Insertion loss; Magnetic resonance; Saturation magnetization; Barium ferrite films; junction circulators; self-biased;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/TMAG.2011.2116159
Filename :
5715881
Link To Document :
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