High-sensitivity microwave power sensor for GaAs-MMIC implementation

Author

Dehe, A. ; Krozer, V. ; Chen, B. ; Hartnagel, H.L.

Author_Institution

Inst. fur Hochfrequenztech., Tech. Hochschule Darmstadt, Germany

Volume

32

Issue

23

fYear

1996

fDate

11/7/1996 12:00:00 AM

Firstpage

2149

Lastpage

2150

Abstract

GaAs bulk micromachining combined with MESFET technology has been applied to fabricate a thermoelectric microwave power sensor in a terminating load configuration. Its advantages are technological compatibility with MMIC processes combined with excellent performance: the sensitivity under normal ambient pressure is 2.02 V/W, inherent linearity over a dynamic range of 48 dB and a thermal time constant of 500 μs; maximum VSWR of 1.07 up to 26.5 GHz. Such integrated sensors can also be used in the millimetre-wave regime

Keywords

MESFET integrated circuits; electric sensing devices; field effect MMIC; gallium arsenide; micromachining; microwave detectors; millimetre wave detectors; power measurement; thermoelectric devices; 26.5 GHz; EHF; GaAs; GaAs MMIC implementation; GaAs bulk micromachining; MESFET technology; NiCr thin film resistors; SHF; high-sensitivity power sensor; integrated sensors; millimetre-wave regime; technological compatibility; terminating load configuration; thermoelectric microwave power sensor;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19961416

Filename

543891