Suppression of the CPW leakage in common millimeter-wave flip-chip structures

Author

Lee, Gye-An ; Lee, Hai-Young

Author_Institution

Dept. of Electron. Eng., Ajou Univ., Suwon, South Korea

Volume

8

Issue

11

fYear

1998

fDate

11/1/1998 12:00:00 AM

Firstpage

366

Lastpage

368

Abstract

Leakage phenomena in GaAs flip-chip structures, mounted on common GaAs and alumina main substrates, are studied using the spectral domain approach with the goal of reducing possible chip-to-chip crosstalk and transmission resonance. We have found that the TM₀ parallel-plate mode in the main substrate is dominant for the coplanar waveguide flip-chip leakage, and that the leakage can be suppressed by properly selecting the gap height and the main substrate thickness in addition to the dielectric constant

Keywords

III-V semiconductors; coplanar waveguides; crosstalk; flip-chip devices; gallium arsenide; millimetre wave integrated circuits; spectral-domain analysis; Al₂O₃; CPW leakage; GaAs; GaAs substrate; alumina substrate; chip-to-chip crosstalk; coplanar waveguide; dielectric constant; gap height; millimeter-wave flip-chip structure; parallel plate mode; spectral domain analysis; substrate thickness; transmission resonance; Conductors; Coplanar waveguides; Crosstalk; Dielectric constant; Dielectric substrates; Gallium arsenide; Integrated circuit technology; Millimeter wave technology; Packaging; Surface waves;

fLanguage

English

Journal_Title

Microwave and Guided Wave Letters, IEEE

Publisher

ieee

ISSN

1051-8207

Type

jour

DOI

10.1109/75.736245

Filename

736245