Title :
Coplanar waveguides on silicon substrate with thick oxidized porous silicon (OPS) layer
Author :
Choong-Mo Nam ; Young-Se Kwon
Author_Institution :
Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol., Seoul, South Korea
Abstract :
The problem of high dielectric loss of waveguide on silicon in the microwave region can be solved by utilizing a thick silicon dioxide layer that is formed by silicon substrate anodization and oxidation processes. Coplanar waveguides (CPW´s) are fabricated on silicon substrate with a 20-μm-thick oxidized porous silicon (OPS) layer and demonstrate very high performance of 0.1-dB/mm attenuation at 4 GHz. Thus, the OPS process is promising for gigaherz applications of silicon substrates.
Keywords :
anodisation; coplanar waveguides; dielectric losses; elemental semiconductors; microwave materials; oxidation; porous semiconductors; silicon; 4 GHz; Si-SiO/sub 2/; anodization; coplanar waveguide; dielectric loss; fabrication; microwave attenuation; oxidation; oxidized porous silicon layer; silicon substrate; Coplanar waveguides; Costs; Current density; Dielectric losses; Dielectric materials; Dielectric substrates; Microwave technology; Optical waveguides; Oxidation; Silicon compounds;
Journal_Title :
Microwave and Guided Wave Letters, IEEE
