Comparison of coplanar 60-GHz low-noise amplifiers based on a GaAs PM-HEMT technology

Author

Bessemoulin, A. ; Verweyen, L. ; Massler, H. ; Reinert, W. ; Alquie, Georges ; Hulsmann, A. ; Schlechtweg, M.

Author_Institution

Lab. des Instruments et Systemes, Paris, France

Volume

8

Issue

11

fYear

1998

Firstpage

396

Lastpage

398

Abstract

For use in low-noise receivers of communication or radar systems, three different two-stage amplifiers for 60 GHz, using a 0.15-μm PM-HEMT technology on GaAs, have been compared in terms of gain and noise figure. The amplifiers realized in coplanar waveguide technology (CPW) differ in the matching networks of the two stages, optimized either for low-noise or maximum gain bias condition. At 59 GHz, a minimum noise figure of 3.0 dB with an associated gain of 9.3 dB and a maximum gain of 12.2 dB with a noise figure of 3.8 dB were achieved.

Keywords

HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; coplanar waveguide components; gallium arsenide; millimetre wave amplifiers; 0.15 micron; 3.0 to 3.8 dB; 60 GHz; 9.3 to 12.2 dB; GaAs; GaAs PM-HEMT technology; MMIC amplifier; coplanar waveguide; gain; low noise amplifier; low noise receiver; matching network; noise figure; two-stage amplifier; Circuit noise; Circuit simulation; Coplanar waveguides; FETs; Gallium arsenide; Low-noise amplifiers; MMICs; Noise figure; Performance gain; Temperature;

fLanguage

English

Journal_Title

Microwave and Guided Wave Letters, IEEE

Publisher

ieee

ISSN

1051-8207

Type

jour

DOI

10.1109/75.736258

Filename

736258