A 95-GHz InP HEMT MMIC amplifier with 427-mW power output

Author

Chen, Y.C. ; Ingram, D.L. ; Lai, R. ; Barsky, M. ; Grunbacher, R. ; Block, T. ; Yen, H.C. ; Streit, D.C.

Author_Institution

Electron. & Technol. Div., TRW Inc., Redondo Beach, CA, USA

Volume

8

Issue

11

fYear

1998

Firstpage

399

Lastpage

401

Abstract

We have established a state-of-the-art InGaAs-InAlAs-InP HEMT MMIC fabrication process for millimeter-wave high-power applications. A two-stage monolithic microwave integrated circuit (MMIC) power amplifier with 0.15-μm gate length and 1.28-mm output periphery fabricated using this process has demonstrated an output power of 427 mW with 19% power-added efficiency at 95 GHz. To our knowledge, this is the highest output power ever reported at this frequency for any solid-state MMIC amplifier.

Keywords

HEMT integrated circuits; III-V semiconductors; MMIC power amplifiers; field effect MMIC; indium compounds; millimetre wave amplifiers; 0.15 micron; 19 percent; 427 mW; 95 GHz; InGaAs-InAlAs-InP; InP HEMT MMIC amplifier; fabrication; output power; power added efficiency; two-stage millimeter wave solid state power amplifier; Fabrication; HEMTs; Indium phosphide; MMICs; Microwave amplifiers; Microwave integrated circuits; Millimeter wave integrated circuits; Monolithic integrated circuits; Power amplifiers; Power generation;

fLanguage

English

Journal_Title

Microwave and Guided Wave Letters, IEEE

Publisher

ieee

ISSN

1051-8207

Type

jour

DOI

10.1109/75.736259

Filename

736259