Title :
Long-wavelength In/sub 0.53/Ga/sub 0.47/As metamorphic p-i-n photodiodes on GaAs substrates
Author :
Jang, J.H. ; Cueva, G. ; Dumka, D.C. ; Hoke, W.E. ; Lemonias, P.J. ; Adesida, I.
Author_Institution :
Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA
fDate :
2/1/2001 12:00:00 AM
Abstract :
Metamorphic In/sub 0.53/Ga/sub 0.47/As p-i-n photodiodes on GaAs substrate exhibiting the lowest dark current ever reported were fabricated and characterized. Their dark current, DC and RF performances were measured and compared for devices of different sizes. Typical dark current for 15-μm-diameter devices was 600 pA under 5-V reverse bias, corresponding to a dark current density of 3.40×10/sup -4/ A/cm2. Typical responsivity measured with 1.55-μm optical radiation was 0.55 A/W corresponding to an external quantum efficiency of 44%. The electrical 3 dB bandwidths of the photodiodes with diameters smaller than 20 μm were over 20 GHz.
Keywords :
III-V semiconductors; current density; dark conductivity; gallium arsenide; indium compounds; molecular beam epitaxial growth; optical fabrication; photodiodes; 1.55 mum; 15 mum; 20 GHz; 20 mum; 44 percent; 5 V; 600 pA; DC performance; GaAs; GaAs substrates; In/sub 0.53/Ga/sub 0.47/As; RF performance; characterization; dark current; dark current density; electrical bandwidths; external quantum efficiency; fabrication; long-wavelength photodiodes; metamorphic p-i-n photodiodes; optical radiation; p-i-n photodiodes; photodiodes; responsivity; reverse bias; Bandwidth; Dark current; Gallium arsenide; HEMTs; Indium phosphide; MODFETs; PIN photodiodes; Photodetectors; Radio frequency; Substrates;
Journal_Title :
Photonics Technology Letters, IEEE
