Modeling of Ionizing Radiation-Induced Degradation in Multiple Gate Field Effect Transistors

Author

Esqueda, Ivan S. ; Barnaby, Hugh J. ; Holbert, Keith E. ; El-Mamouni, Farah ; Schrimpf, Ronald D.

Author_Institution

Sch. of Electr., Comput. & Energy Eng., Arizona State Univ., Tempe, AZ, USA

Volume

58

Issue

2

fYear

2011

fDate

4/1/2011 12:00:00 AM

Firstpage

499

Lastpage

505

Abstract

The radiation response of advanced non-planar multiple gate field effect transistors (MuGFETs) has been shown to have a strong dependence on fin width (W). The incorporation of total ionizing dose (TID) effects into a physics-based surface-potential compact model allows for the effects of radiation-induced degradation in MuGFET devices to be modeled in circuit simulators, e.g., SPICE. A set of extracted parameters are used in conjunction with closed-form expressions for the surface potential, thereby enabling accurate modeling of the radiation-response and its dependence on W . Total ionizing dose (TID) experiments and two-dimensional (2D) TCAD simulations are used to validate the compact modeling approach presented in this paper.

Keywords

MOSFET; SPICE; dosimetry; nuclear electronics; radiation effects; semiconductor device models; technology CAD (electronics); MOSFET; SPICE; advanced nonplanar multiple gate field effect transistor; circuit simulator; ionizing radiation-induced degradation model; physics-based surface-potential compact model; radiation response; radiation-induced degradation effect; surface potential; total ionizing dose effect; two-dimensional TCAD simulation; Data models; Degradation; FinFETs; Integrated circuit modeling; Logic gates; Mathematical model; Silicon; Compact model; FinFETs; multiple gate field effect transistors (MuGFETs); silicon-on-insulator (SOI); total ionizing dose (TID);

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2010.2101615

Filename

5715906