Effective Passivation of AlGaN/GaN HEMTs by ALD-Grown AlN Thin Film

Author

Huang, Sen ; Jiang, Qimeng ; Yang, Shu ; Zhou, Chunhua ; Chen, Kevin J.

Author_Institution

Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon, China

Volume

33

Issue

4

fYear

2012

fDate

4/1/2012 12:00:00 AM

Firstpage

516

Lastpage

518

Abstract

An effective passivation technique for AlGaN/GaN high-electron-mobility transistors (HEMTs) is presented. This technique features an AlN thin film grown by plasma-enhanced atomic layer deposition (PEALD). With in situ remote plasma pretreatments prior to the AlN deposition, an atomically sharp interface between ALD-AlN and III-nitride has been obtained. Significant current collapse suppression and dynamic ON-resistance reduction are demonstrated in the ALD-AlN-passivated AlGaN/GaN HEMTs under high-drain-bias switching conditions.

Keywords

high electron mobility transistors; passivation; thin films; HEMT; current collapse suppression; high drain bias switching condition; high electron mobility transistors; passivation; plasma pretreatment; plasma-enhanced atomic layer deposition; thin film; Aluminum gallium nitride; Gallium nitride; HEMTs; Logic gates; MODFETs; Passivation; Switches; AlGaN/GaN high-electron-mobility transistors (HEMTs); AlN; current collapse; dynamic_$R_{rm ON}$; passivation; plasma-enhanced atomic layer deposition (PEALD);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2012.2185921

Filename

6155727