Two-dimensional analytic modeling of very thin SOI MOSFETs

Author

Woo, Jason C S ; Terrill, Kyle W. ; Vasudev, Prahalad K.

Author_Institution

Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA

Volume

37

Issue

9

fYear

1990

fDate

9/1/1990 12:00:00 AM

Firstpage

1999

Lastpage

2006

Abstract

An analytic solution of the Poisson´s equation for MOSFETs on very thin SOI (silicon on insulator) was developed using an infinite series method. The calculation region includes the thin SOI and the gate and buried oxides. The results of this model were found to agree well with a two-dimensional (PISCES) simulation in the subthreshold region and the linear region with small V_DS. This model is used to study the short-channel behavior of very small MOS transistors on thin SOI. It is found that with very thin SOI, short-channel effects are much reduced compared to bulk MOS transistors and depend on the bulk-substrate bias. The model also shows that it is possible to fabricate submicrometer transistors on very thin SOI even if the channel doping is nearly intrinsic

Keywords

electronic engineering computing; insulated gate field effect transistors; numerical methods; semiconductor device models; semiconductor-insulator boundaries; series (mathematics); thin film transistors; MOS transistors; MOSFETs; PISCES simulation; Poisson equation; analytic modeling; analytic solution; bulk-substrate bias; buried oxides; calculation region; channel doping; gate oxide; infinite series method; linear region; short-channel behavior; submicrometer transistors; subthreshold region; thin SOI; Circuits; Delay; Doping; MOSFETs; Parasitic capacitance; Poisson equations; Semiconductor device modeling; Semiconductor process modeling; Silicon on insulator technology; Substrates;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.57162

Filename

57162