Title :
A new buried-gate GTO structure having a large safe operating area
Author :
Satou, Yukimasa ; Yatsuo, Tsutomu ; Sakurada, Shuroku
Author_Institution :
Hitachi Ltd., Ibaraki, Japan
fDate :
9/1/1990 12:00:00 AM
Abstract :
A novel structure of a buried-gate GTO (gate turn-off thyristor) was proposed for expanding the safe operating area (SOA) of unit-GTOs. The SOA of unit-GTOs in a test sample GTO and the spike voltage at the limit of turn-off of the test sample were investigated experimentally. The SOA was calculated by means of a simple model in order to study the mechanism of the expansion of SOA in the structure. The SOA was expanded due to the reduction of the sheet resistance of the p-base layer by the fine mesh pattern of the buried layer. Corresponding to the increased size of the SOA, the spike voltage increased to 1000 V
Keywords :
semiconductor device models; semiconductor device testing; thyristors; buried-gate GTO structure; expansion mechanism; fine mesh pattern; p-base layer; safe operating area; sheet resistance; simple model; spike voltage; test sample; turn-off limit; Cathodes; Diffusion processes; Electric variables; Impurities; Inverters; Semiconductor optical amplifiers; Snubbers; Testing; Thyristors; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
