Higher Gate Capacitance Ge n-MOSFETs Using Laser Annealing

Author

Chen, W.B. ; Shie, B.S. ; Chin, Albert

Author_Institution

Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

Volume

32

Issue

4

fYear

2011

fDate

4/1/2011 12:00:00 AM

Firstpage

449

Lastpage

451

Abstract

By applying laser annealing (LA) on both gate dielectrics and source/drain activation, the TaN/ZrO₂/La₂O₃/SiO₂ on Ge n-MOSFETs shows a high gate capacitance density, a small n⁺/p-junction ideality factor of 1.10, a small subthreshold swing (SS) of 106 mV/dec, and a good high-field mobility of 285 or 340 cm²/V·s after gate leakage correction at 1 MV/cm, at a small 0.95-nm equivalent oxide thickness (EOT). To the best of our knowledge, this is the first demonstration of significantly high gate capacitance in MOSFETs by LA. This is also the highest 1-MV/cm mobility at the smallest EOT of Ge n-MOSFETs and better than the SiO₂/Si universal mobility.

Keywords

MOSFET; carrier mobility; elemental semiconductors; germanium; lanthanum compounds; laser beam annealing; silicon compounds; tantalum compounds; zirconium compounds; EOT; Ge; TaN-ZrO₂-La₂O₃-SiO₂-Ge; equivalent oxide thickness; gate dielectrics; gate leakage correction; high gate capacitance nMOSFET; high-field mobility; laser annealing; p-junction ideality factor; size 0.95 nm; source-drain activation; subthreshold swing; Annealing; Dielectrics; Lasers; Logic gates; MOSFET circuits; MOSFETs; Silicon; Annealing; Ge; gate dielectric; high- $kappa$; laser;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2011.2106478

Filename

5716657