Title :
Silicon Nanowire All-Around Gate MOSFETs Built on a Bulk Substrate by All Plasma-Etching Routes
Author :
Moon, Dong-Il ; Choi, Sung-Jin ; Kim, Chung-Jin ; Kim, Jee-Yeon ; Lee, Jin-Seong ; Oh, Jae-Sub ; Lee, Gi-Sung ; Park, Yun-Chang ; Hong, Dae-Won ; Lee, Dong-Wook ; Kim, Young-Su ; Kim, Jeoung-Woo ; Han, Jin-Woo ; Choi, Yang-Kyu
Author_Institution :
Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol., Daejeon, South Korea
fDate :
4/1/2011 12:00:00 AM
Abstract :
A gate length of 25 nm and a silicon nanowire (SiNW) with a width of 6 nm and a height of 10 nm fully surrounded by a gate are demonstrated. A suspended SiNW, which is fully depleted, is fabricated on a bulk substrate by employing the deep reactive-ion etching process known as the Bosch process. The electrical characteristics and short-channel effects (SCEs) of the SiNW MOSFETs with all-around gates are presented. The fabricated devices show excellent immunity against SCEs despite their being built on a bulk substrate and having gate lengths scaled down to the 25-nm regime. Improved electrostatic characteristics that suppress the SCEs are shown when the dimension of the SiNW is reduced.
Keywords :
MOSFET; elemental semiconductors; nanowires; semiconductor quantum wires; silicon; sputter etching; Bosch process; Si; all plasma-etching routes; all-around gate MOSFET; bulk substrate; deep reactive-ion etching; electrostatic characteristics; short channel effects; silicon nanowire; size 10 nm; size 25 nm; size 6 nm; Etching; Fabrication; Logic gates; MOSFETs; Silicon; Substrates; All-around gate (AAG); Bosch process; bulk MOSFET; deep reactive-ion etch; gate-all-around; plasma etching; short-channel effects (SCEs); silicon nanowire (SiNW);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2011.2106758
